Gate Controlled Diode (GCD) with micro-pattern trench structure, allows charge carrier modulation at
the anode region by gate control. This is utilized to operate the diode at low saturation mode and
desaturate the diode before IGBT turn-on, to achieve a better trade-off. The paper demonstrates the
concept of a silicon bi-polar power diode with micro-pattern trench gate, for 6.5 kV applications.
Thereby, a detailed study of switching behaviour and the switching pattern were conducted, so as to
reduce the overall switching loss and improve the efficiency. The efficiency also depends on the
robustness of the diode, several issues concerning the reverse recovery robustness of the Gate controlled
diode were investigated.
en
dc.language.iso
en
en
dc.publisher
České vysoké učení technické v Praze. České centrum IET
cze
dc.title
A Simulation study of 6.5kV Gate Controlled Diode
en
dc.title.alternative
15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS
