Experimental Comparison of a New SAG-IGBT and Conventional DAG-IGBT Structures with LTO Design in terms of Turn-on Performance

Abstract

n this paper, we compare a new Single Active Gate Trench IGBT(SAG-IGBT) with the conventional Double Active Trench Gate IGBT (DAG-IGBT) structures with the LTO (LOCOS Trench Oxide) technology. Both structures have been fabricated with the same design rules and process platform and test chips compared in terms of their Eon performance. The new proposed SAG-IGBT is created by connected one of the active trench to emitter potential which effectively halves the gate capacitance CGE and CGD. It is also shown that the proposed SAG-IGBT can achieve a further 50% reduction in QGC than the conventional device due to only one trench being used for MOS channel conduction per unit cell. In addition it is shown that the SAG design can improve turn-on energy loss, EON, by up to 25% for identical Vce(on), with no degradation in the SCSOA.