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dc.contributor.authorMadhu-Lakshman Mysore
dc.contributor.authorBasler, Thomas
dc.contributor.authorLutz, Josef
dc.contributor.authorBaburske, Roman
dc.contributor.authorSchulze, Hans-Joachim
dc.contributor.authorNiedernostheide, Franz-Josef
dc.date.accessioned2021-11-10T09:49:46Z
dc.date.available2021-11-10T09:49:46Z
dc.date.issued2021
dc.identifier.isbn978-80-01-06875-5
dc.identifier.urihttp://hdl.handle.net/10467/98458
dc.description.abstractIn this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were performed far beyond the safe operating area (SOA). The presence of current density filaments at the collector side during SC leads to a local temperature increase that reconstructs the emitter metallization and thus leads to a modification of the top Al surface. Here, the optical microscope was used to observe the change in emitter surface metallization. For 650 V IGBTs, a uniform Al modification pattern was observed irrespective of DC-link voltage and SC pulse width, which is in contrast to the results of 1200 V and 1700 V IGBTs. The computer-aided TCAD simulations were performed using a simplified front-side IGBT structure to understand the uniform Al modification on all the measured DC-link voltages.cze
dc.publisherČeské vysoké učení technické v Praze. České centrum IETcze
dc.titleAluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTscze
dc.title.alternative15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS
dc.typeconference paper
dc.typestať ve sborníku
dc.identifier.doi10.14311/ISPS.2021.003


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