This paper investigates the reliability of commercial planar and trench 1.2-kV 4H-SiC MOFSETs under
repetitive unclamped inductive switching (UIS) and short circuit (SC) stresses. The degradation of device
characteristics, including the transfer characteristics, drain leakage current Idss, and output
characteristics, is observed. Repetitive SC stress was performed for 400 and 600 V bus voltages.
Increased buss voltages during stress have higher impact on electrical performance of tested devices. The
hot carriers injection and trapping into the gate oxide in the channel region may occur during the aging
experiments and are believed to be responsible for the variation of electrical parameters.
en
dc.language.iso
en
en
dc.publisher
České vysoké učení technické v Praze. České centrum IET
cze
dc.title
DEGRADATION OF POWER SIC MOSFET Under REPETITIVE UIS and SHORT CIRCUIT STRESS
en
dc.title.alternative
15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS