Switched mode power supplies (SMPS) for target applications covering a wide range from telecom
rectifiers through servers to solar inverters or electric vehicle chargers share the need for high
efficiencies in order to minimize the overall energy consumption and the total cost of ownership. With
the appearance of wide bandgap semiconductors designers cannot only choose between different
devices but also may benefit from using advanced topologies. This work compares important
properties of a CoolSiC™ Silicon-Carbide MOSFET, a CoolGaN™ E-mode GaN power transistor, a
TRENCHSTOP 5™ IGBT accompanied by a SiC Schottky diode and a CoolMOS™ Superjunction (SJ)
device, and discusses an approach to avoid the limitations of SJ devices with respect to hard
commutation of the body diode and evaluates the achievable efficiency in the AC-DC conversion stage
of a power supply.
cze
dc.language.iso
en
en
dc.publisher
České vysoké učení technické v Praze. České centrum IET
cze
dc.title
Power device solutions for highly efficient power supplies
en
dc.title.alternative
15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS
