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dc.contributor.authorSiemieniec, Ralf
dc.contributor.authorMente, René
dc.contributor.authorKutschak, Matteo
dc.contributor.authorPulsinelli, Francesco
dc.date.accessioned2021-11-10T13:31:03Z
dc.date.available2021-11-10T13:31:03Z
dc.date.issued2021
dc.identifier.isbn978-80-01-06875-5
dc.identifier.urihttp://hdl.handle.net/10467/98441
dc.description.abstractSwitched mode power supplies (SMPS) for target applications covering a wide range from telecom rectifiers through servers to solar inverters or electric vehicle chargers share the need for high efficiencies in order to minimize the overall energy consumption and the total cost of ownership. With the appearance of wide bandgap semiconductors designers cannot only choose between different devices but also may benefit from using advanced topologies. This work compares important properties of a CoolSiC™ Silicon-Carbide MOSFET, a CoolGaN™ E-mode GaN power transistor, a TRENCHSTOP 5™ IGBT accompanied by a SiC Schottky diode and a CoolMOS™ Superjunction (SJ) device, and discusses an approach to avoid the limitations of SJ devices with respect to hard commutation of the body diode and evaluates the achievable efficiency in the AC-DC conversion stage of a power supply.cze
dc.language.isoenen
dc.publisherČeské vysoké učení technické v Praze. České centrum IETcze
dc.titlePower device solutions for highly efficient power suppliesen
dc.title.alternative15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS
dc.typestať ve sborníkucze
dc.typeconference paperen
dc.identifier.doi10.14311/ISPS.2021.008


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