Fast-recovery diodes can exhibit negative differential resistance during reverse recovery which is associated
with the formation of current filaments triggered by the presence of inhomogeneities along the device.
Physics concerning the dynamics of current filaments has been widely analyzed in literature through
numerical simulations. However, a method to clearly identify the elements that dominate on the current
pattern formation is still not available since filaments can appear also in uniform structures. In this work, a
novel TCAD approach is provided to suppress the numerical errors due to the discretization of the transport
equations which allows us to analyze the effects of the junction depth and the presence of different doping
inhomogeneities in the anode doping profile of large-area diodes.
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dc.language.iso
en
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dc.publisher
České vysoké učení technické v Praze. České centrum IET
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dc.title
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach
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dc.title.alternative
15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS