| dc.contributor.author | Madhu-Lakshman Mysore | |
| dc.contributor.author | Basler, T. | |
| dc.contributor.author | Lutz, J. | |
| dc.contributor.author | Baburske, R. | |
| dc.contributor.author | Schulze, H.-J. | |
| dc.contributor.author | Niedernostheide, Franz-Josef | |
| dc.date.accessioned | 2021-11-10T10:08:23Z | |
| dc.date.available | 2021-11-10T10:08:23Z | |
| dc.date.issued | 2021 | |
| dc.identifier.isbn | 978-80-01-06875-5 | |
| dc.identifier.uri | http://hdl.handle.net/10467/98438 | |
| dc.description.abstract | In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is
investigated. The application of the recently proposed injection enhanced floating emitter (IEFE)
concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in
front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly
improved short-circuit robustness compared to IGBT without p-islands and for the same design. The
simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the
collector-side without affecting the static and dynamic losses of the device. | cze |
| dc.description.abstract | In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is
investigated. The application of the recently proposed injection enhanced floating emitter (IEFE)
concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in
front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly
improved short-circuit robustness compared to IGBT without p-islands and for the same design. The
simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the
collector-side without affecting the static and dynamic losses of the device. | |
| dc.publisher | České vysoké učení technické v Praze. České centrum IET | cze |
| dc.title | Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness | cze |
| dc.title.alternative | 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS | |
| dc.type | stať ve sborníku | |
| dc.type | conference paper | |
| dc.identifier.doi | 10.14311/ISPS.2021.004 | |
