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dc.contributor.authorMadhu-Lakshman Mysore
dc.contributor.authorBasler, T.
dc.contributor.authorLutz, J.
dc.contributor.authorBaburske, R.
dc.contributor.authorSchulze, H.-J.
dc.contributor.authorNiedernostheide, Franz-Josef
dc.date.accessioned2021-11-10T10:08:23Z
dc.date.available2021-11-10T10:08:23Z
dc.date.issued2021
dc.identifier.isbn978-80-01-06875-5
dc.identifier.urihttp://hdl.handle.net/10467/98438
dc.description.abstractIn this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly improved short-circuit robustness compared to IGBT without p-islands and for the same design. The simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the collector-side without affecting the static and dynamic losses of the device.cze
dc.description.abstractIn this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly improved short-circuit robustness compared to IGBT without p-islands and for the same design. The simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the collector-side without affecting the static and dynamic losses of the device.
dc.publisherČeské vysoké učení technické v Praze. České centrum IETcze
dc.titleStudy of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustnesscze
dc.title.alternative15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS
dc.typestať ve sborníku
dc.typeconference paper
dc.identifier.doi10.14311/ISPS.2021.004


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