Prohlížení Archiv DOI dle autora "Sankara Narayanan, E.M."

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    • Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications 

      Autor: Hongyang Yan; Sankara Narayanan, E.M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This is the first report on a novel multi-polarization channel applied to realize normally-off and high- performance vertical GaN device devices for low voltage applications. This structure is made with 2DHG ...