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dc.contributor.authorŠevčík M.
dc.contributor.authorZídek J.
dc.contributor.authorNejezchlebová J.
dc.contributor.authorŠtefan J.
dc.contributor.authorMachová A.
dc.contributor.authorSeiner H.
dc.contributor.authorUhnáková A.
dc.contributor.authorČapek J.
dc.contributor.authorLejček P.
dc.date.accessioned2020-03-17T20:59:42Z
dc.date.available2020-03-17T20:59:42Z
dc.date.issued2019
dc.identifierV3S-332287
dc.identifier.citationŠEVČÍK, M., et al. Crack growth in Fe-Si (2 wt%) single crystals on macroscopic and atomistic level. Results in Physics. 2019, 14(102450), ISSN 2211-3797. DOI 10.1016/j.rinp.2019.102450. Available from: https://www.sciencedirect.com/science/article/pii/S2211379719305492?via%3Dihub
dc.identifier.issn2211-3797 (online)
dc.identifier.urihttp://hdl.handle.net/10467/87109
dc.description.abstractThis paper is dedicated to experimental and atomistic study of the influence of so called T-stress (acting along the crack plane) on fracture processes in bcc iron. We analyze experimental results from fracture tests performed at room temperature on bcc iron-silicon single crystals with a long edge crack (1¯ 1 0)[1 1 0] (crack plane/crack front). The specimens were loaded in tension mode I under different border conditions inducing different sign of the T-stress. The brittle-ductile behavior at the crack front was monitored on-line via optical microscopy together with external force and prolongation of the specimens. Topology of the specimens has been investigated before and after the fracture tests via the white light interferometer. The microscopic processes produced by the crack itself were studied at 300 K via 3D molecular dynamic (MD) simulations in bcc iron under equivalent boundary conditions and the T-stress was examined by means of stress calculations on the atomistic level. The experimental and atomistic results show that the sign of the T-stress affects the fracture behavior. MD simulations reveal that positive T-stress makes the emission of blunting dislocations ⟨1 1 1⟩{1 1 2} from the crack front more difficult. As a consequence, higher external loading is needed for crack blunting in the experimental specimens with T > 0 in comparison with the specimen having T < 0.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherElsevier
dc.relation.ispartofResults in Physics
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S2211379719305492?via%3Dihub
dc.subjectFe-Si single crystalseng
dc.subjectExperimentseng
dc.subjectFractureeng
dc.subjectT-stresseng
dc.subjectMolecular dynamicseng
dc.subjectBcc ironeng
dc.titleCrack growth in Fe-Si (2 wt%) single crystals on macroscopic and atomistic leveleng
dc.typečlánek v časopisecze
dc.typearticleeng
dc.identifier.doi10.1016/j.rinp.2019.102450
dc.rights.accessrestrictedAccess
dc.identifier.wos000485104100122
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85068471928


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