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Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV



dc.contributor.authorHazdra P.
dc.contributor.authorVobecký J.
dc.date.accessioned2020-03-17T10:19:50Z
dc.date.available2020-03-17T10:19:50Z
dc.date.issued2019
dc.identifierV3S-332048
dc.identifier.citationHAZDRA, P. and J. VOBECKÝ. Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2019, 216(17), ISSN 1862-6300. DOI 10.1002/pssa.201900312.
dc.identifier.issn1862-6300 (print)
dc.identifier.issn1862-6319 (online)
dc.identifier.urihttp://hdl.handle.net/10467/87096
dc.description.abstractRadiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy. Radiation defects are characterized by capacitance deep‐level transient spectroscopy and C‐V measurement. The stability of introduced defects and their effect on carrier lifetime reduction is discussed, as well.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherWILEY-V C H VERLAG GMBH
dc.relation.ispartofPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.relation.urihttps://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201900312
dc.subjectsilicon carbideeng
dc.subjectelectron irradiationeng
dc.subjectradiation defectseng
dc.subjectlifetime controleng
dc.titleRadiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeVeng
dc.typečlánek v časopisecze
dc.typejournal articleeng
dc.identifier.doi10.1002/pssa.201900312
dc.relation.projectidinfo:eu-repo/grantAgreement/Czech Science Foundation/GA/GAP102%2F12%2F2108/CZ/Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics/
dc.rights.accessclosedAccess
dc.identifier.wos000479458000001
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85069874075


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