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dc.contributor.authorHazdra P.
dc.contributor.authorPopelka S.
dc.date.accessioned2019-12-17T09:19:16Z
dc.date.available2019-12-17T09:19:16Z
dc.date.issued2019
dc.identifierV3S-335095
dc.identifier.citationHAZDRA, P. and S. POPELKA. Displacement damage and total ionisation dose effects on 4H-SiC power devices. IET Power Electronics. 2019, 12(15), 3910-3918. ISSN 1755-4535. DOI 10.1049/iet-pel.2019.0049.
dc.identifier.issn1755-4535 (print)
dc.identifier.issn1755-4543 (online)
dc.identifier.urihttp://hdl.handle.net/10467/85868
dc.description.abstractA comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal–oxide–semiconductor field-effect transistors. According to the authors’ study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherIET Publishing Group
dc.relation.ispartofIET Power Electronics
dc.relation.urihttps://digital-library.theiet.org/content/journals/10.1049/iet-pel.2019.0049
dc.subjectpower semiconductor switcheseng
dc.subjectradiation hardening (electronics)eng
dc.subjectsilicon compoundseng
dc.subjectwide band gap semiconductorseng
dc.subjectSchottky diodeseng
dc.subjectionisationeng
dc.subjectpower MOSFETeng
dc.subjectcarrier lifetimeeng
dc.subjecthydrogeneng
dc.titleDisplacement damage and total ionisation dose effects on 4H-SiC power deviceseng
dc.typečlánek v časopisecze
dc.typejournal articleeng
dc.identifier.doi10.1049/iet-pel.2019.0049
dc.relation.projectidinfo:eu-repo/grantAgreement/EC/OK7X/NMP3-LA-2013-604057/EU/Silicon Carbide Power Electronics Technology for Energy Efficient Devices/SPEED
dc.rights.accessclosedAccess
dc.identifier.wos000500187900008
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85075818971


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