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Radiation resistance of wide-bandgap semiconductor power transistiors



dc.contributor.authorHazdra P.
dc.contributor.authorPopelka S.
dc.date.accessioned2019-09-20T15:10:29Z
dc.date.available2019-09-20T15:10:29Z
dc.date.issued2017
dc.identifierV3S-311316
dc.identifier.citationHAZDRA, P. and S. POPELKA. Radiation resistance of wide-bandgap semiconductor power transistiors. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2017, 214(4), ISSN 1862-6300. DOI 10.1002/pssa.201600447.
dc.identifier.issn1862-6300 (print)
dc.identifier.issn1862-6319 (online)
dc.identifier.urihttp://hdl.handle.net/10467/85413
dc.description.abstractThe paper compares radiation resistance of SiC MOSFET and GaN HEMT to electron radiation.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherWILEY-V C H VERLAG GMBH
dc.relation.ispartofPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.relation.urihttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201600447/full
dc.subjectelectron irradiationeng
dc.subjectGaNeng
dc.subjectSiCeng
dc.subjectpower transistoreng
dc.subjectradiation effectseng
dc.titleRadiation resistance of wide-bandgap semiconductor power transistiorseng
dc.typečlánek v časopisecze
dc.typejournal articleeng
dc.identifier.doi10.1002/pssa.201600447
dc.relation.projectidinfo:eu-repo/grantAgreement/Czech Science Foundation/GA/GAP102%2F12%2F2108/CZ/Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics/
dc.rights.accessclosedAccess
dc.identifier.wos000402158300014
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85000454233


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