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dc.contributor.author Hazdra P.
dc.contributor.author Popelka S.
dc.date.accessioned 2019-09-20T15:10:29Z
dc.date.available 2019-09-20T15:10:29Z
dc.date.issued 2017
dc.identifier V3S-311316
dc.identifier.citation HAZDRA, P. and S. POPELKA. Radiation resistance of wide-bandgap semiconductor power transistiors. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2017, 214(4), ISSN 1862-6300. DOI 10.1002/pssa.201600447.
dc.identifier.issn 1862-6300 (print)
dc.identifier.issn 1862-6319 (online)
dc.identifier.uri http://hdl.handle.net/10467/85413
dc.description.abstract The paper compares radiation resistance of SiC MOSFET and GaN HEMT to electron radiation. eng
dc.format.mimetype application/pdf
dc.language.iso eng
dc.publisher WILEY-V C H VERLAG GMBH
dc.relation.ispartof PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.relation.uri http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600447/full
dc.subject electron irradiation eng
dc.subject GaN eng
dc.subject SiC eng
dc.subject power transistor eng
dc.subject radiation effects eng
dc.title Radiation resistance of wide-bandgap semiconductor power transistiors eng
dc.type článek v časopise cze
dc.type journal article eng
dc.identifier.doi 10.1002/pssa.201600447
dc.relation.projectid info:eu-repo/grantAgreement/Czech Science Foundation/GA/GAP102%2F12%2F2108/CZ/Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics/
dc.rights.access closedAccess
dc.identifier.wos 000402158300014
dc.type.status Peer-reviewed
dc.type.version publishedVersion
dc.identifier.scopus 2-s2.0-85000454233
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