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dc.contributor.authorVobecký J.
dc.contributor.authorSchulze H-J.
dc.contributor.authorStreit P.
dc.contributor.authorNiedrenostheide F.-J.
dc.contributor.authorBotan V.
dc.contributor.authorPrzybilla, J.
dc.contributor.authorKellner-Werdehausen U.
dc.contributor.authorBellini M.
dc.date.accessioned2019-09-19T14:05:18Z
dc.date.available2019-09-19T14:05:18Z
dc.date.issued2017
dc.identifierV3S-307988
dc.identifier.citationVOBECKÝ, J., et al. Silicon Thyristors for Ultrahigh Power (GW) Applications (Invited Paper). IEEE Transactions on Electron Devices. 2017, 64(03), 760-768. ISSN 0018-9383. DOI 10.1109/TED.2016.2638476.
dc.identifier.issn0018-9383 (print)
dc.identifier.issn1557-9646 (online)
dc.identifier.urihttp://hdl.handle.net/10467/85409
dc.description.abstractEvolution of thyristor technology and the design concepts, which brought and maintain the phase control thyristor (PCT) at the top of a power pyramid, are discussed. The state-of-the-art device concepts like electrically triggered thyristor and light triggered thyristor are described for voltage classes up to 8.5 kV and maximal onstate rated current of 6 kA. Main focus is laid on the PCTs for high-voltage direct current transmission, the enabler of power transmission beyond the 10-GW level.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.relation.urihttp://ieeexplore.ieee.org/document/7819558/
dc.subjectsiliconeng
dc.subjectthyristoreng
dc.subjectpower deviceseng
dc.subjectHVDCeng
dc.titleSilicon Thyristors for Ultrahigh Power (GW) Applications (Invited Paper)eng
dc.typečlánek v časopisecze
dc.typejournal articleeng
dc.identifier.doi10.1109/TED.2016.2638476
dc.rights.accessclosedAccess
dc.identifier.wos000396056700010
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85009949457


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