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Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
(IEEE, 2021)
The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n
power diodes is explained using deep level transient spectroscopy ...
Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
(WILEY-V C H VERLAG GMBH, 2021)
The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and ...