Prohlížení Publikační činnost ČVUT dle předmětu "radiation effects"
Zobrazují se záznamy 1-2 z 2
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Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
(IEEE, 2021)The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy ... -
Radiation resistance of wide-bandgap semiconductor power transistiors
(WILEY-V C H VERLAG GMBH, 2017)The paper compares radiation resistance of SiC MOSFET and GaN HEMT to electron radiation.