Prohlížení Publikační činnost ČVUT dle autora "Fekete L."

Zobrazují se záznamy 1-2 z 2

    • Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth 

      Autor: Mortet V.; Taylor A.; Davydova M.; Jiránek J.; Fekete L.; Klimša L.; Šimek D.; Lambert N.; Sedláková S.; Kopeček J.; Hazdra P.
      (Elsevier Science, 2022)
      The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is ...

    • Properties of boron-doped (113) oriented homoepitaxial diamond layers 

      Autor: Mortet V.; Taylor A.; Lambert N.; Gedeonová Z.; Fekete L.; Lorinčík J.; Klimša L.; Kopeček J.; Hubík P.; Šobáň Z.; Laposa A.; Davydova M.; Voves J.; Pošta A.; Povolný V.; Hazdra P.
      (Elsevier Science, 2021)
      Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices do not yet approach expected theoretical values. Recent works ...