Show simple item record



dc.contributor.authorRezek, Bohuslav
dc.contributor.authorCermak, J.
dc.contributor.authorKoide, Y.
dc.contributor.authorTakeuchi, D.
dc.date.accessioned2018-04-27T06:44:22Z
dc.date.available2018-04-27T06:44:22Z
dc.date.issued2014
dc.identifier.citationJournal of Applied Physics. 2014, 115(5), ISSN 0021-8979.cze
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/10467/75663
dc.description.abstractSpectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent. (C) 2014 AIP Publishing LLC.cze
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofJournal of Applied Physicsen
dc.titleSpectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamonden
dc.typearticleen
dc.identifier.doihttp://dx.doi.org/10.1063/1.4864420
dcterms.typečlánekcze


Files in this item



This item appears in the following Collection(s)

Show simple item record