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Reliability of Reverse Properties of Power Semiconductor Devices: Influence of Surface Dielectric Layer and its Experimental Verification
(2008)
Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual
standard tests do not reveal total information concerning the technological genetic aspects ...
Conditions of Temperature and Time Instability Occurrence of Reverse-Biased Semiconductor Power Devices
(2006)
An investigation of the boundary states of power semiconductor devices is important with respect to their function reliability. Focus of this
article is based on the evaluation of transient temperature increasing of ...