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dc.contributor.authorMacháč, J.
dc.date.accessioned2012-08-07T08:08:14Z
dc.date.available2012-08-07T08:08:14Z
dc.date.issued1983-04
dc.identifier.citationMacháč J.: Static model of DH laser, IEE Proc. Solid-State and Electron Devices, Pt. I, Vol. 130, No. 2, 1983, p. 61.cze
dc.identifier.urihttp://hdl.handle.net/10467/12441
dc.description.abstractA method of complex analysis of the double-heterostructure stripe-geometry laser, based on a new static model, is presented. The optical field distribution in the active region of the laser is described by the wave equation. The interaction between the optical field and free-charge carriers is expressed by the set of rate equations describing also the carrier-concentration profile. Owing to the interaction, it is necessary to solve these equations by a self-consistent procedure. The results of the analysis are light-current characteristics, current dependences of a modal gain, spectra and a near-field pattern. These characteristics are demonstrated in an example.eng
dc.language.isocescze
dc.publisherIEEEcze
dc.rights© 1983 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.eng
dc.subjectsemiconductor laserseng
dc.subjectmodellingeng
dc.titleStatic model of DH lasercze
dc.typečlánek z tištěného periodikacze
dc.identifier.doi10.1049/ip-i-1.1983.0015


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