Prohlížení České vysoké učení technické v Praze dle předmětu "p-i-n diodes"
Zobrazují se záznamy 1-2 z 2
-
Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
(WILEY-V C H VERLAG GMBH, 2021)The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and ... -
Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
(IEEE, 2021)The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy ...