Prohlížení České vysoké učení technické v Praze dle autora "Baburske, R."

Zobrazují se záznamy 1-2 z 2

    • Key criteria for the short-circuit capability of IGBTs 

      Autor: Treek van, V.; Schulze, H.-J.; Baburske, R.; Hille, F.; Niedernostheide, F.-J.; Pfirsch, F.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Short-circuit behavior and capability are investigated and optimized during IGBT development. Thereby, knowledge about destruction and high-frequency short-circuit oscillation mechanisms is needed. For the thermal ...

    • Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness 

      Autor: Madhu-Lakshman Mysore; Basler, T.; Lutz, J.; Baburske, R.; Schulze, H.-J.; Niedernostheide, Franz-Josef
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept ...