Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering
dc.contributor.author | Golosov, Dmitriy A. | |
dc.contributor.author | Zavatskiy, Sergey M. | |
dc.contributor.author | Melnikov, Sergey N. | |
dc.date.accessioned | 2021-11-26T10:27:24Z | |
dc.date.available | 2021-11-26T10:27:24Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Acta Polytechnica. 2013, vol. 53, no. 2 | |
dc.identifier.issn | 1210-2709 (print) | |
dc.identifier.issn | 1805-2363 (online) | |
dc.identifier.uri | http://hdl.handle.net/10467/98574 | |
dc.description.abstract | This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10-2 S/cm under 800 °C. | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | |
dc.publisher | České vysoké učení technické v Praze | cs |
dc.publisher | Czech Technical University in Prague | en |
dc.relation.ispartofseries | Acta Polytechnica | |
dc.relation.uri | https://ojs.cvut.cz/ojs/index.php/ap/article/view/1743 | |
dc.rights | Creative Commons Attribution 4.0 International License | en |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | |
dc.title | Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering | |
dc.type | article | en |
dc.date.updated | 2021-11-26T10:27:25Z | |
dc.rights.access | openAccess | |
dc.type.status | Peer-reviewed | |
dc.type.version | publishedVersion |
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