Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV

Abstract

Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy. Radiation defects are characterized by capacitance deep‐level transient spectroscopy and C‐V measurement. The stability of introduced defects and their effect on carrier lifetime reduction is discussed, as well.