Prohlížení dle autora "Hájek, J."

Zobrazují se záznamy 1-2 z 2

    • Capacitive methodes for testing of power semiconductor devices 

      Autor: Papež, V.; Hájek, J.; Kopecký, B.
      (2015)
      Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage ...

    • New method for Si-wafer resistivity determination 

      Autor: Hájek, J.; Papež, V.; Horák, M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Wafer resistivity is one of the most important parameters in production of Power Semiconductor Devices (PSD). This parameter is mainly responsible for achieving required breakdown voltage and ...