Prohlížení dle autora "Dideban D."
-
Investigation of sub-10nm Cylindrical Surrounding Gate Germanium Nanowire Field Effect Transistor with Different Cross-Section Areas.
Autor: Bayani A.; Dideban D.; Voves J.; Moezi N.
(Academic Press, 2017)Germanium nanowires (GeNWs) with different cross-sectional areas are considered as the channel of a cylindrical surrounding gate field effect transistors (CSGFETs) and the electronic properties of them are calculated through ...