Prohlížení dle autora "Basler, Thomas"

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    • Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs 

      Autor: Madhu-Lakshman Mysore; Basler, Thomas; Lutz, Josef; Baburske, Roman; Schulze, Hans-Joachim; Niedernostheide, Franz-Josef
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were ...

    • High-Voltage IGBT turn-off at transition from overcurrent to desaturation 

      Autor: Chen, Weinan; Qin, Chaozheng; Lutz, Josef; Basler, Thomas
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      The turn-off capability of a power semiconductor is normally given by the datasheet with test conditions. The RBSOA (Reverse Bias Safe Operation Area) diagram limits the collector-emitter peak voltage and maximum ...