Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers
Type of document
článek v časopisejournal article
Peer-reviewed
publishedVersion
Author
Hazdra P.
Laposa A.
Šobáň Z.
Voves J.
Lambert N.
Davydova M.
Povolný V.
Taylor A.
Mortet V.
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Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron-doped diamond epitaxial layers. Morphology and thickness of deposited layers were determined by AFM and X-SEM; resistivity, carrier concentration, and mobility were determined by Hall measurement. Specific contact resistance of evaporated Ti/Au, Zr/Au, and Mo/Au contacts was measured using c-TLM structures after different annealing stages at temperatures up to 850 C. Results show that on layers with {113} orientation it is possible to achieve
ohmic contacts of comparable quality as for layers with {100} orientation. In summary, this study confirms the suitability of {113} oriented boron-doped diamond epitaxial layers for the fabrication of diamond power electronic devices with excellent ohmic contacts.
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