In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is
investigated. The application of the recently proposed injection enhanced floating emitter (IEFE)
concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in
front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly
improved short-circuit robustness compared to IGBT without p-islands and for the same design. The
simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the
collector-side without affecting the static and dynamic losses of the device.
cze
dc.description.abstract
In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is
investigated. The application of the recently proposed injection enhanced floating emitter (IEFE)
concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in
front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly
improved short-circuit robustness compared to IGBT without p-islands and for the same design. The
simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the
collector-side without affecting the static and dynamic losses of the device.
dc.publisher
České vysoké učení technické v Praze. České centrum IET
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dc.title
Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness
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dc.title.alternative
15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS