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Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness
(České vysoké učení technické v Praze. České centrum IET, 2021)
In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is
investigated. The application of the recently proposed injection enhanced floating emitter (IEFE)
concept ...