Prohlížení Archiv DOI dle autora "Kong, S. T."
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Experimental Comparison of a New SAG-IGBT and Conventional DAG-IGBT Structures with LTO Design in terms of Turn-on Performance
Autor: Kong, S. T.; Ngwendson, L.
(České vysoké učení technické v Praze. České centrum IET, 2021)n this paper, we compare a new Single Active Gate Trench IGBT(SAG-IGBT) with the conventional Double Active Trench Gate IGBT (DAG-IGBT) structures with the LTO (LOCOS Trench Oxide) technology. ...