Prohlížení Publikační činnost ČVUT dle autora "Gedeonová Z."

Zobrazují se záznamy 1-2 z 2

    • Properties of boron-doped (113) oriented homoepitaxial diamond layers 

      Autor: Mortet V.; Taylor A.; Lambert N.; Gedeonová Z.; Fekete L.; Lorinčík J.; Klimša L.; Kopeček J.; Hubík P.; Šobáň Z.; Laposa A.; Davydova M.; Voves J.; Pošta A.; Povolný V.; Hazdra P.
      (Elsevier Science, 2021)
      Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices do not yet approach expected theoretical values. Recent works ...

    • Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers 

      Autor: Hazdra P.; Laposa A.; Šobáň Z.; Taylor A.; Lambert N.; Povolný V.; Kroutil J.; Gedeonová Z.; Hubík P.; Mortet V.
      (Elsevier Science, 2022)
      The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. ...