Understanding intrinsic stress effects on vibrational response of silicon nanowires

Abstract

Silicon nanowires have become integral components in nanoelectromechanical systems and nanoelectronics. This article explores the intricate relationship between intrinsic stress and mechanical behavior in silicon nanowires. Utilizing a comprehensive approach involving Raman characterization, resonance testing, and thermal processing, the study investigates the induced intrinsic stresses within silicon nanowires. The findings reveal the introduction of 1.4G Pa of intrinsic stress and a 1.3 MHz frequency shift to silicon nanowire through thermal processing. These results underscore the importance of understanding and utilizing intrinsic stresses in silicon nanowires for the advancement of nextgeneration nanoelectromechanical systems. Overall, this article contributes to the ongoing efforts aimed at fully realizing the potential of silicon nanowires in various scientific and technological domains.