Prohlížení Archiv DOI dle autora "Chvála, A."

Zobrazují se záznamy 1-3 z 3

    • Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions 

      Autor: Kozárik, J.; Marek, J.; Minárik, M.; Chvála, A.; Debnár, T.; Donoval, M.; Stuchlíková, Ľ.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper descirbes impact of repetitive short-circuit stress on commercially available 600V e-mode GaN HEMTs with p-GaN gate. The devices were subjected to up to 105 short circuit stress cycles at 100V and ...

    • DEGRADATION OF POWER SIC MOSFET Under REPETITIVE UIS and SHORT CIRCUIT STRESS 

      Autor: Marek, J.; Kozárik, J.; Chvála, A.; Minárik, M.; Stuchlíková, Ľ.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper investigates the reliability of commercial planar and trench 1.2-kV 4H-SiC MOFSETs under repetitive unclamped inductive switching (UIS) and short circuit (SC) stresses. The degradation of device characteristics, ...

    • The influence of electrical stress on the distribution of electrically active defects in IGBT 

      Autor: Drobný, J.; Marek, J.; Chvála, A.; Faraga, J.; Jagelka, M.; Stuchlíková, L.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The ...