Now showing items 21-35 of 35

    • DEGRADATION OF POWER SIC MOSFET Under REPETITIVE UIS and SHORT CIRCUIT STRESS 

      Author: Marek, J.; Kozárik, J.; Chvála, A.; Minárik, M.; Stuchlíková, Ľ.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper investigates the reliability of commercial planar and trench 1.2-kV 4H-SiC MOFSETs under repetitive unclamped inductive switching (UIS) and short circuit (SC) stresses. The degradation of device characteristics, ...
    • Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs 

      Author: Madhu-Lakshman Mysore; Basler, Thomas; Lutz, Josef; Baburske, Roman; Schulze, Hans-Joachim; Niedernostheide, Franz-Josef
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were ...
    • New Packaging Concepts: Bridging Devices and Applications 

      Author: Shiori Idaka
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      New Packaging Concepts: Bridging Devices and Applications Shiori Idaka, European Research Co-operation Centre. MITSUBISHI ELECTRIC EUROPE B.V. Ratingen, Germany Abstract The performance of power modules ...
    • The influence of electrical stress on the distribution of electrically active defects in IGBT 

      Author: Drobný, J.; Marek, J.; Chvála, A.; Faraga, J.; Jagelka, M.; Stuchlíková, L.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The ...
    • Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions 

      Author: Kozárik, J.; Marek, J.; Minárik, M.; Chvála, A.; Debnár, T.; Donoval, M.; Stuchlíková, Ľ.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper descirbes impact of repetitive short-circuit stress on commercially available 600V e-mode GaN HEMTs with p-GaN gate. The devices were subjected to up to 105 short circuit stress cycles at 100V and ...
    • Key criteria for the short-circuit capability of IGBTs 

      Author: Treek van, V.; Schulze, H.-J.; Baburske, R.; Hille, F.; Niedernostheide, F.-J.; Pfirsch, F.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Short-circuit behavior and capability are investigated and optimized during IGBT development. Thereby, knowledge about destruction and high-frequency short-circuit oscillation mechanisms is needed. For the thermal ...
    • TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices 

      Author: Lachichi, A.; Mawby, P.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices A. Lachichi and P. Mawby, School of Engineering University of Warwick. Coventry, United Kingdom Abstract Reliability and performance ...
    • Experimental Comparison of a New SAG-IGBT and Conventional DAG-IGBT Structures with LTO Design in terms of Turn-on Performance 

      Author: Kong, S. T.; Ngwendson, L.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      n this paper, we compare a new Single Active Gate Trench IGBT(SAG-IGBT) with the conventional Double Active Trench Gate IGBT (DAG-IGBT) structures with the LTO (LOCOS Trench Oxide) technology. ...
    • A Simulation study of 6.5kV Gate Controlled Diode 

      Author: Gurunath Vishwamitra Yoganath; Quang Tien Tran; Eckel, Hans-Günter
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Gate Controlled Diode (GCD) with micro-pattern trench structure, allows charge carrier modulation at the anode region by gate control. This is utilized to operate the diode at low saturation mode and ...
    • Seminář jaderného inženýrství 2021 - sborník příspěvků 

      Author: Novák, Ondřej
      (České vysoké učení technické v Praze, 2021)
    • High-Voltage IGBT turn-off at transition from overcurrent to desaturation 

      Author: Chen, Weinan; Qin, Chaozheng; Lutz, Josef; Basler, Thomas
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      The turn-off capability of a power semiconductor is normally given by the datasheet with test conditions. The RBSOA (Reverse Bias Safe Operation Area) diagram limits the collector-emitter peak voltage and maximum ...
    • Structure-Aware Compact Thermal Models of Power LEDs 

      Author: Kuźniak, K.; Szymańska, K.; Starzak, Ł.; Janicki, M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper based on the example of white power LEDs illustrates the methodology for the generation of device compact thermal models, whose element values can be assigned physical meaning. The diode ...
    • Singular Point Source MOS (S-MOS) Cell Concept 

      Author: Rahimo, Munaf T. A.; Nistor, Iulian; Green, David
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      A Singular Point Source MOS (S-MOS) cell concept suitable for power semiconductor MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by which the total channel ...
    • Power device solutions for highly efficient power supplies 

      Author: Siemieniec, Ralf; Mente, René; Kutschak, Matteo; Pulsinelli, Francesco
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Switched mode power supplies (SMPS) for target applications covering a wide range from telecom rectifiers through servers to solar inverters or electric vehicle chargers share the need for high ...
    • Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer-Printing 

      Author: Lerner, Ralf; Hansen, Nis Hauke
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Several approaches for close integration of power switches with CMOS logic are subject of technical evaluations and academic discussions. This paper identifies the commercially relevant processing steps of ...