Two-Domain Model for Orthogonal Fluxgate
Type of document
článek z tištěného periodikaAuthor
Butta, Mattia
Ripka, Pavel
Rights
© 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Metadata
Show full item recordAbstract
In this paper a new model for orthogonal fluxgate is presented. A first attempt to explain the working principle of the orthogonal fluxgates was done in the 1970's. We show that this model does not work well on recently developed orthogonal fluxgate sensors with thin-film core on microwire. A new more accurate two-domain model based both on domain wall motion and magnetization rotation is proposed. We show that the new model better explains the observed properties of thin-film orthogonal fluxgate.
Collections
The following license files are associated with this item: