Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
Typ dokumentu
článek v časopisejournal article
Peer-reviewed
publishedVersion
Autor
Vacula P.
Kotě V.
Barri D.
Vacula M.
Husák M.
Jakovenko J.
Privitera S.
Práva
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This article describes waffle power MOSFET
segmentation and defines its analytic models. Although
waffle gate pattern is well-known architecture for effective
channel scaling without requirements on process modification, until today no precise model considering segmentation of MOSFETs with waffle gate patterns, due to bulk
connections, has been proposed. Two different MOSFET
topologies with gate waffle patterns have been investigated
and compared with the same on-resistance of a standard
MOSFET with finger gate pattern. The first one with diagonal metal interconnections allows reaching more than
40% area reduction. The second MOSFET with the simpler
orthogonal metal interconnections allows saving more than
20% area. Moreover, new models defining conditions
where segmented power MOSFETs with waffle gate patterns occupy less area than the standard MOSFET with
finger gate pattern, have been introduced.
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Kolekce
- Publikační činnost ČVUT [1372]