Browsing Publikační činnost ČVUT by Subject "radiation defects"
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(WILEY-V C H VERLAG GMBH, 2021)The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and ...
Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV
(WILEY-V C H VERLAG GMBH, 2019)Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy. ...