Prohlížení Publikační činnost ČVUT dle předmětu "p-i-n diode"
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Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation
(IEEE, 2018)Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at ...