Browsing Publikační činnost ČVUT by Subject "Schottky diodes"
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Displacement damage and total ionisation dose effects on 4H-SiC power devices
(IET Publishing Group, 2019)A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy ... -
Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers
(Elsevier Science, 2022)The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. ... -
Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers
(WILEY-V C H VERLAG GMBH, 2023)In this article, the electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron-doped diamond layers using ruthenium for both the ohmic and Schottky contacts were investigated.