Prohlížení Publikační činnost ČVUT dle autora "Popelka S."
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Displacement damage and total ionisation dose effects on 4H-SiC power devices
Autor: Hazdra P.; Popelka S.
(IET Publishing Group, 2019)A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy ... -
Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode
Autor: Vobecký J.; Hazdra P.; Popelka S.; Sharma R.
(IEEE, 2015)The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an ... -
Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation
Autor: Hazdra P.; Popelka S.; Schöner A.
(IEEE, 2018)Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at ... -
Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
Autor: Hazdra P.; Smrkovský P.; Popelka S.
(WILEY-V C H VERLAG GMBH, 2021)The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and ... -
Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models
Autor: Hazdra P.; Popelka S.
(Trans Tech Publications, 2019)Compact simulation models of two key silicon carbide power components, the Junction Barrier Schottky diode and the power MOSFET, which are taking into account the effect of irradiation by high-energy electrons are presented. -
Radiation resistance of wide-bandgap semiconductor power transistiors
Autor: Hazdra P.; Popelka S.
(WILEY-V C H VERLAG GMBH, 2017)The paper compares radiation resistance of SiC MOSFET and GaN HEMT to electron radiation.