Papež, V. - Kojecký, B. - Šámal, D.: Reliability of Reverse Properties of Power Semiconductor Devices: Influence of Surface Dielectric Layer and its Experimental Verification. Microelectronics Journal. 2008, vol. 39, no. 6, p. 851-856. ISSN 0026-2692.
Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual
standard tests do not reveal total information concerning the technological genetic aspects of devices production. These aspects can be
linked with individual technological operations, most frequently with preparation of semiconductor surface and its protection by
dielectric layers. Properties of dielectric layers influence the time stability of reverse currents by means of a change of dielectric
permittivity. This article analyses some physical causes of the time-instable behaviour of devices and also presents a special method and
equipment for reliable tests.
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dc.language.iso
en
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dc.subject
Power semiconductor devices
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Reliability
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Time instability
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Endurance tests
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dc.title
Reliability of Reverse Properties of Power Semiconductor Devices: Influence of Surface Dielectric Layer and its Experimental Verification