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    • Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation 

      Author: Hazdra P.; Popelka S.; Schöner A.
      (IEEE, 2018)
      Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at ...