Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth
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Elsevier Science
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Abstract
The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is observed.
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MORTET, V., et al. Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth. Diamond and Related Materials. 2022, 122 ISSN 0925-9635. DOI 10.1016/j.diamond.2022.108887.