Prohlížení dle předmětu "p-i-n diodes"

Zobrazují se záznamy 1-2 z 2

    • Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices 

      Autor: Hazdra P.; Smrkovský P.; Popelka S.
      (WILEY-V C H VERLAG GMBH, 2021)
      The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and ...

    • Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes 

      Autor: Hazdra P.; Smrkovský P.; Vobecký J.; Mihaila A.
      (IEEE, 2021)
      The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy ...