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    • Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes 

      Author: Hazdra P.; Smrkovský P.; Vobecký J.; Mihaila A.
      (IEEE, 2021)
      The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy ...